N-polar and Ga-polar (0001) GaN core–shell wires detached from an AlN/Si(111) growth template. Different facets have been identified, limiting the vertical shell growth extension, modelled by varying surface terminations and different H-passivation.
Site- and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on a single nanorod demonstrates that the emission at 3.0 eV stems from the polarization-free m-plane, which is supported by a fast recombination lifetime of ∼490 ps at low temperatures. Quasi-resonant laser excitation demonstrates predominant radiative recombination at low excitation densities, whereas at high excitation densities, the efficiency is lowered by Auger recombination and/or carrier leakage.
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