We report herein the pressure dependent thermal contact resistance (Rc) between Wollaston wire thermal probe and samples which is evaluated within the framework of an analytical model. This work presents heat transfer between the Wollaston wire thermal probe and samples at nanoscale for different air pressure ranging from 1 Pa to 10 5 Pa. We make use of a scanning thermal microscopy (SThM) for the thermal analysis of two samples, fused silica (SiO2) and Titanium (Ti), with different thermal conductivities. The thermal probe's output voltage difference (∆V) between out-off contact output voltage (Voc) and in-contact output voltage (Vic) was recorded. The result shows that the heat transfer increases with the increasing air pressure and it is found higher for higher thermal conductive material. We also propose an analytical model based on the normalized output voltage difference to extract the probe-sample thermal contact resistance. The obtained Rc values in the range of ~1.8×10 7 K/W to ~14.3×10 7 K/W validate the presented analytical model. Further analysis reveals that the thermal contact resistance between the probe and sample decreases with increasing air pressure. Such behavior is interpreted by the contribution of heat transfer through confined air on thermal contact resistance. In addition, the signature of Rc is also evidenced in the context of thermal mismatch behavior which is studied by using acoustic mismatch model (AMM) and diffuse mismatch model (DMM).
The present work addresses the problem of thermal conductivity simulation in Bi 2 Te 3 and SnSe thermoelectric nanostructures. It first details phonon lifetime calculation in both thermoelectric compounds assuming polynomial dispersion properties and the Debye-Callaway model for the relaxation-time approximation. For both materials, distinct crystallographic directions are considered, i.e., -Z (trigonal axis) and -X (basal plane) for Bi 2 Te 3 and -X (a axis), -Y (b axis), and -Z (c axis) for SnSe. On this basis, the lifetime model is parametrized and bulk thermal conductivity is computed through the resolution of the phonon Boltzmann transport equation with a Monte Carlo method. Grüneisen parameter and mass-disorder lifetime are adjusted to fit experimental temperature dependence. The second part of the study addresses the calculation of thermal conductivity for these two thermoelectric materials in the case of thin films (cross-plane case) and nanowires. The main goals of this work are to provide a fully parametric description of heat transport in Bi 2 Te 3 and SnSe nanofilms and nanowires showing reliable behavior on an extended size range, from 20 nm to 2 μm, and large temperature range (100-500 K for Bi 2 Te 3 ; 200-800 K for SnSe). Comparisons to bulk thermal conductivity calculations and measurements as well as to recent investigations on nanowires, demonstrate the effectiveness of the proposed methodology to deal with nanostructured Bi 2 Te 3 and SnSe.
In this work, we report a study of the electrodeposition of SnSe. Considering the difficulty to stabilize the baths containing Sn(II) and Se(IV) precursors, we investigated the benefits of using sodium oxalate as a complexing agent. Preliminary cyclic voltammetric (CVs) experiments were performed to study the electrochemical behavior of tin and selenium redox systems within this specific electrolyte solution. The study revealed that the oxalate reagent stabilizes the bath chelating Sn(II) and then preventing the precipitation of SnO2. From the CVs, a growth mechanism is proposed and a synthesis potential window is defined, in which the electrodeposition of SnSe films was investigated. Between -0.5 and -0.6 V vs sat. AgCl/Ag, the deposits exhibit typical polycrystalline SnSe needle-like grains. SnSe was shown by Raman spectroscopy and the XRD patterns display an orthorhombic single-phase for this compound. Additional Mössbauer analyses confirm the presence of Sn(II), which is in good agreement with the chemical composition of SnSe films. Moreover, a cross-analysis between the methods shows also the presence of SnSe2 in minor proportion. The depth profile analyses of the samples reveal an in-depth homogeneity as well as the presence of oxygen at the layer surface.
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