Schizophrenia is a chronic disorder characterized by specific positive and negative primary symptoms, social behavior disturbances and cognitive deficits (e.g., impairment in working memory and cognitive flexibility). Mounting evidence suggests that altered excitability and inhibition at the molecular, cellular, circuit and network level might be the basis for the pathophysiology of neurodevelopmental and neuropsychiatric disorders such as schizophrenia. In the past decades, human and animal studies have identified that glutamate and gamma-aminobutyric acid (GABA) neurotransmissions are critically involved in several cognitive progresses, including learning and memory. The purpose of this review is, by analyzing emerging findings relating to the balance of excitatory and inhibitory, ranging from animal models of schizophrenia to clinical studies in patients with early onset, first-episode or chronic schizophrenia, to discuss how the excitatory-inhibitory imbalance may relate to the pathophysiology of disease phenotypes such as cognitive deficits and negative symptoms, and highlight directions for appropriate therapeutic strategies.
MoO2 thin films with hierarchical structure demonstrate excellent rate capability and reversible capacity, and the phase transformation mechanism was revealed.
Zr-substituted SnO 2 -based ceramics (Sn 0.95-x Sb 0.05 Zr x O 2 , x B 0.1) were prepared by using a wet-chemical synthesis method. The results show that the prepared ceramics have a pure tetragonal phase as that of SnO 2 and have a typical characteristic of negative temperature coefficient (NTC) of resistivity over a wide temperature range from -50 to 300°C. The room-temperature resistivity q 25 and material constant B 25/85 of the NTC thermistors increase from 4.77 X cm to 4.89 9 10 7 X cm and from 641 to 5085 K, respectively, when the content of Zr, x, changes from 0 to 0.1. The NTC thermistors also show high cyclic stability and ageing resistance. The analysis of impedance spectra reveals that the NTC effect mainly resulted from the grain-boundary contribution, and the conduction mechanisms of the Sn 0.95-x Sb 0.05 Zr x O 2 thermistors combine with the electron-hopping conduction and band conduction.
Sb-doped SnO2 (ATO) nanostructured thin films were deposited on holey carbon grids by magnetron sputtering at room temperature. Li/electrolyte/ATO cells were assembled by using the deposited ATO grids as test electrodes. The phase component of the ATO electrodes deposited on grids before and after induction at different charge-discharge stages was characterized by using a transmission electron microscope. The results of the investigation show that the nanostructured ATO thin films undergo a reversible lithiation-delithiation process: the decomposition of SnO2 and the occurrence of metallic Sn followed by the formation of an Li-Sn alloy during the discharge process, and then the reversible de-alloying reaction of the Li-Sn alloy and Sn reaction with Li2O, and even partial formation of SnO2 during charge process. The work also shows that the method deposited the active materials directly on the holey carbon grids is a simple and effective way for the investigation of the phase evolution of the electrodes in electrochemical cells.
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