Chemical elements in the sediment columns of Pacific pelagic clays have been measured by neutron activation and atomic absorption method. Their vertical variations are discussed on the basis of the idea that the rate of sedimentaiton changed during geological time by the influx of volcanic eruptions.
A new alternative method to grow the relaxed Ge 0.24 Si 0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Å Ge 0.24 Si 0.76 layer was first grown on a Si(100) substrate. Then a 500-Å Si layer and a subsequent 5000-Å Ge 0.24 Si 0.76 overlayer followed. All these three layers were grown at 600 • C. After being removed from the growth system to air, the sample was first annealed at 850 • C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Å Ge 0.24 Si 0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Å Ge 0.24 Si 0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.
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