The development of organic single-molecule solid-state white emitters holds a great promise for advanced lighting and display applications. Highly emissive single-molecule white emitters were achieved by the design and synthesis of a series of o-carborane-based luminophores. These luminophores are able to induce multiple emissions to directly emit high-purity white light in solid state. By tuning both molecular and aggregate structures, a significantly improved white-light efficiency has been realized (absolute quantum yield 67 %), which is the highest value among the known organic single-molecule white emitters in the solid state. The fine-tuning of the packing modes from H- to J- and cross-stacking aggregates as well as intermolecular hydrogen bonds are successful in one molecular skeleton. These are crucial for highly emissive white-light emission in the solid state.

An efficient strategy was designed to realize spontaneous recovery of mechanochromic luminescence by carborane-functionalized anthracene derivatives. A metastable charge-transfer emission from anthracene to o-carborane is responsible for this process.

The development of organic single-molecule solidstate white emitters holds agreat promise for advanced lighting and displaya pplications.H ighly emissive single-molecule white emitters were achieved by the design and synthesis of as eries of o-carborane-based luminophores.T hese luminophores are able to induce multiple emissions to directly emit high-purity white light in solid state.Bytuning both molecular and aggregate structures,asignificantly improved white-light efficiency has been realized (absolute quantum yield 67 %), which is the highest value among the knowno rganic singlemolecule white emitters in the solid state.The fine-tuning of the packing modes from H-to J-and cross-stacking aggregates as well as intermolecular hydrogen bonds are successful in one molecular skeleton. These are crucial for highly emissive whitelight emission in the solid state.

The microstructures of low-temperature polycrystalline silicon grown both on SiO2 and Corning 7059 glass substrate are presented. The silicon was deposited by the hydrogen dilution method using electron-cyclotron-resonance chemical-vapor deposition at 250 °C without any thermal annealing. The hydrogen dilution ratios were varied from 90% to 99%. Transmission electron microscopy images, Raman shift spectra, and x-ray-diffraction (XRD) patterns of the films were obtained. The maximum grain size was about 1 μm and the crystalline fraction which was characterized from Raman shift spectra was near 100%. From the XRD patterns 〈111〉- and 〈110〉-oriented crystalline silicon grains were clearly present in the polycrystalline silicon films.

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