We present the results of the reactive ion etching of silicon carbide and thin film diamond-like carbon with fluorine containing plasma. A variety of different plasma conditions have been examined for dry etching 4H-SiC. Rates up to $ 1800 Å /min for 4H-SiC and $ 2000 Å /min for DLC were obtained with CF 4 -based gas mixtures. Similar etch rate trends were achieved with both CF 4 /Ar and CF 4 /O 2 mixtures. The rates are strong functions of plasma composition, ion energy and pressure. Better anisotropic features were found for higher pressure (> 20 mTorr) and for low atomic fluorine concentration but for high ion energy there was some slight degree of trenching at the base of the sidewalls.
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