In this study, the phase transition behavior of the BaTiO3–BaZrO3 system was studied using micro-Raman scattering and dielectric measurement techniques. BaZrxTi1−xO3 ceramics were prepared for x=0.00, 0.05, 0.08, 0.15, 0.20, and 1.00 compositions using a solid-state reaction technique. A single-phase perovskite structure of the ceramics was identified by the x-ray diffraction technique. The basic phase transition temperatures in these compositions were studied in the temperature range of 70–575 K. The tetragonal to cubic transition temperature was found to decrease with increasing Zr content. The orthorhombic to tetragonal transition temperature that increases with an initial increase in Zr content merges with the tetragonal–cubic transition for x⩾0.15 compositions. Raman spectra of rhombohedral and orthorhombic phases could not be distinguished. Excellent agreement between the crystallographic transition temperatures obtained by both techniques suggested that Zr substituted octahedra were uniformly distributed in the material without introducing any mechanical stress.

and their solid solutions useful in a broad range of device applications. Various factors that influence the material properties such as particle size, stresses, stoichiometry, compositional homogeneity and their effects on phase transition were investigated. The processing conditions, A-and B-site substitution, size-dependent Raman spectra and the structure-property correlations are discussed in the bulk, thin film and nano-crystalline forms of these materials. A film thickness dependence stress study on lead titanate (PT) and lead zirconate titanate (PZT) films indicated that the nature of stress depends strongly on the lattice parameters of the film and substrate. The size effect was found to decrease the ferroelectric transition temperature in lead-based perovskite materials. Both ionic charge and radii induced changes in the Raman spectra of A-and B-site substituted perovskites and layered compounds were studied. A-site substitution in strontium bismuth tantalite (SBT) was found to induce a relatively linear variation of transition temperature compared with the B-site substituted SBT.Raman spectra of layered compounds and their solid solutions exhibited a strong dependence on dopants resulting in structural modifications.

This investigation deals with the effect of growth temperature on the microstructure, nitrogen content, and crystallinity of C–N nanotubes. The X-ray photoelectron spectroscopic (XPS) study reveals that the atomic percentage of nitrogen content in nanotubes decreases with an increase in growth temperature. Transmission electron microscopic investigations indicate that the bamboo compartment distance increases with an increase in growth temperature. The diameter of the nanotubes also increases with increasing growth temperature. Raman modes sharpen while the normalized intensity of the defect mode decreases almost linearly with increasing growth temperature. These changes are attributed to the reduction of defect concentration due to an increase in crystal planar domain sizes in graphite sheets with increasing temperature. Both XPS and Raman spectral observations indicate that the C–N nanotubes grown at lower temperatures possess higher degree of disorder and higher N incorporation.

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