The density-functional linear-response approach to lattice-dynamical calculations in semiconductors is presented in full detail. As an application, we calculate complete phonon dispersions for the elemental semiconductors Si and Ge, and for the III-V semiconductor compounds GaAs, A1As, GaSb, and A1Sb. Our results are in excellent agreement with experiments where available, and provide predictions where they are not. As a byproduct, we obtain real-space interatomic force constants for these materials, which are useful both for interpolating the dynamical matrices through the Brillouin zone, and as ingredients of approximate calculations for mixed systems such as alloys and microstructures. The possibility of studying these systems using the force constants of the pure materials relies on the so-called mass approximation, i.e. , on neglecting the dependence of the force constants upon composition. The accuracy of such an approximation is tested and found to be very good for cationic intermixing in binary semiconductors, while it is less so for anionic substitutions.The situation is intermediate in the case of elemental semiconductors.
Linearized augmented planewave methods are known as the most precise numerical schemes for solving the Kohn-Sham equations of density-functional theory (DFT). In this review, we describe how this method is realized in the all-electron full-potential computer package, exciting. We emphasize the variety of different related basis sets, subsumed as (linearized) augmented planewave plus local orbital methods, discussing their pros and cons and we show that extremely high accuracy (microhartrees) can be achieved if the basis is chosen carefully. As the name of the code suggests, exciting is not restricted to ground-state calculations, but has a major focus on excited-state properties. It includes time-dependent DFT in the linear-response regime with various static and dynamical exchange-correlation kernels. These are preferably used to compute optical and electron-loss spectra for metals, molecules and semiconductors with weak electron-hole interactions. exciting makes use of many-body perturbation theory for charged and neutral excitations. To obtain the quasi-particle band structure, the GW approach is implemented in the single-shot approximation, known as G(0)W(0). Optical absorption spectra for valence and core excitations are handled by the solution of the Bethe-Salpeter equation, which allows for the description of strongly bound excitons. Besides these aspects concerning methodology, we demonstrate the broad range of possible applications by prototypical examples, comprising elastic properties, phonons, thermal-expansion coefficients, dielectric tensors and loss functions, magneto-optical Kerr effect, core-level spectra and more.
We present a phenomenological force-constant model developed for the description of lattice dynamics of sp(2) hybridized carbon networks. Within this model approach, we introduce a set of parameters to calculate the phonon dispersion of graphene by fitting the ab initio dispersion. Vibrational modes of carbon nanotubes are obtained by folding the two-dimensional (2D) dispersion of graphene and applying special corrections for the low-frequency modes. Particular attention is paid to the exact dispersion law of the acoustic modes, which determine the low-frequency thermal properties and reveal quantum size effects in carbon nanotubes. On the basis of the resulting phonon spectra, we calculate the specific heat and the thermal conductance for several achiral nanotubes of different diameters. Through the temperature dependence of the specific heat, we demonstrate that phonon spectra of carbon nanotubes show one-dimensional behavior and that the phonon sub-bands are quantized at low temperatures. Consequently, we prove the quantization of the phonon thermal conductance by means of an analysis based on the Landauer theory of heat transport
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