CCD-based thermoreflectance microscopy has emerged as a high resolution, non-contact imaging technique for thermal profiling and performance and reliability analysis of numerous electronic and optoelectronic devices at the micro-scale. This thermography technique, which is based on measuring the relative change in reflectivity of the device surface as a function of change in temperature, provides high-resolution thermal images that are useful for hot spot detection and failure analysis, mapping of temperature distribution, measurement of thermal transient, optical characterization of photonic devices and measurement of thermal conductivity in thin films. In this paper we review the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermoreflectance microscopy in various devices.

The tuning of lateral and vertical correlations in self-organized PbSe/Pb 1-xEu xTe quantum dot superlattices by changes in the spacer thicknesses is demonstrated and shown to be due to finite size effects in the dot-dot interactions. As a consequence, different dot arrangements such as vertically aligned dot columns or fcc stacking are obtained for a single material system without changes in growth conditions. The different dot superstructures are shown to exhibit a different scaling behavior of the lateral versus vertical dot separation, as well as a different evolution of dot sizes and shapes.

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We demonstrate thermal imaging using a charge-coupled device (CCD) thermoreflectance lock-in technique that achieves a record temperature resolution of 18 mK, 44 dB below the nominal dynamic range of the camera (from 72 to 116 dB) for 10(5) periods of measurement. We show that the quantization limit of the CCD camera does not set the lower bound on the precision of the technique. We present a theoretical description of the measurement technique, accounting for the effects of noise and nonideal analog-to-digital conversion, resulting in analytic expressions for the probability distribution function of the measured signals, and allowing for explicit calculation of resolution and error bars. The theory is tested against parametrically varied measurements and can be applied to other sampled lock-in measurements. We also experimentally demonstrate sub-quantization-limit imaging on a well-characterized model system, joule heating in a silicon resistor. The accuracy of the resistor thermoreflectance measurement is confirmed by comparing the results with those of a standard 3omega measurement.