A new optically pumped polarized H− ion source (OPPIS) was developed for the RHIC polarization program and successfully used for the first polarized beam commissioning at RHIC. The OPPIS produces in excess of 1.0 mA H− ion current at about 80% polarization. An ECR primary proton source development and a new 29 GHz microwave power supply are described. A new type sodium-jet ionizer cell is biased to −32 kV to produce a 35 keV polarized beam ready for injection to the RFQ. Higher current and higher polarization were also obtained with the biased jet-cell in comparison with an old oven-type ionizer cell.
A new etching method for single-crystal A1505 is proposed using ArH implantation and H5P04 chemical etching. Photolitographically defined patterns are transferred into sharp structures on the wafer surface by selectively removing the damaged material. A double implantation of Ar* at 50 key followed by 180 key was performed on all samples, using a dose of 2 >< 1015 ions/cm2 for the low-energy implant. Doses of 2 x 10u, 2 X 1016, and 4 >< 1016 ions/cm2 were used for the 180 keV implant. Scanning electron microscopy and atomic force microscopy were used to characterize the pattern obtained, while transmission electron microscopy and Rutherford backscattering channeling analysis were employed to study the implanted layer. Under the conditions investigated, both the etchable range (90 to 160 nm) and the etching rate (1 to 7 nm/mm) were found to be strongly correlated with the implanted dose. Sharp and uniform interfaces between etched and unetched regions were obtained, forming steps with an average slope of 30 to 45°. The proposed method offers high selectivity, lack of contamination of the substrate, and compatibility with standard processing.
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