Optical, acoustical and near-resonance acousto-optical properties of GaAs and InP an investigated and several high performance devices are achieved using these crystals. It is shown that this study can be extended to other direct-gap semiconductors of Ill-V and il-VI elements to match the optical sources in a large range of available light wavelengths.
Brillouin scattering is used to determine the refractive index N=n+iκ of Ga0.52In0.48P layers, lattice matched to GaAs, in a wavelength range never investigated before (400 nm<λ<800 nm). It is shown that the variations of n are given by two different analytical expressions, depending on whether the corresponding photon energies E are lower or higher than the band gap Eg. Optical absorption measurements are deduced from the Brillouin linewidth. The whole set of elastic constant is also determined through the Brillouin shifts. For E∼Eg, i.e., in resonance conditions, n displays a small but sharp peak closely related to the abrupt increase of the optical absorption. Besides the Brillouin investigations, complementary results obtained by ellipsometry and Raman spectroscopy confirm our optical properties measurements in Ga0.52In0.48P and the electronic resonance behavior, respectively.
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