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Depletion-region modulation (DRM) has recently been identified as a mechanism that influences photoconductance lifetime measurements. The effect is observed in semiconductor samples containing a depletion-region (i.e., p-n junction solar cells). Experimental measurements presented within demonstrate that the DRM effect dominates the conductance measurement at low excess carrier concentrations, resulting in an overestimation of the effective lifetime by several orders of magnitude. The influence of substrate thickness on the DRM effect is experimentally verified. The previously developed analytical equation for DRM is in agreement with our experimental data and can be used to correct DRM affected photoconductance lifetime measurements. Finally, the impact on the sensitivity of a photoconductance measurement is discussed for the DRM corrected case.

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SunPower is currently shipping the highest efficiency commercial solar panel in the 20% efficiency E-series with high reliability, and proven high energy yield per rated watt [1,2]. This paper discusses the next generation SunPower solar cell, the Maxeon Gen III used in the recently launched X-series modules. Higher efficiency, improved field performance from lower temperature coefficient, improved reliability due to low reverse breakdown voltage and a uniform dark appearance are the characteristics of this technology. The SunPower Maxeon Gen III solar cell is a high efficiency design intended to reduce cost throughout the value chain by improved performance. The improved efficiency is due to a passivated contact structure lowering the cell emitter recombination to approximately 15 fA/cm 2 [3]. The process is currently in full scale manufacturing at approximately 100 MW per year in the SunPower's Fab2 production facility in the Philippines.

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