The nitridomagnesosilicate Ba[Mg 3 SiN 4 ] has been synthesized in an arc-welded Ta ampule. The crystal structure was solved and refined from single-crystal X-ray data and Rietveld refinement on the basis of powder X-ray diffraction data, revealing a distorted triclinic variant of the UCr 4 C 4 structure type (space group P ‾ 1 (no. 2), Z = 1, a = 3.451(1), b = 6.069(5), c = 6.101(4) Å, α = 85.200 (7), β = 73.697 (5), γ = 73.566(8)°, R p = 0.0218, R wp = 0.0290). The crystal structure of Ba[Mg 3 SiN 4 ] consists of a highly-condensed network of (Mg,Si)N 4 tetrahedra with Ba 2+ centered inside vierer ring channels along [100] in a cuboidal coordination by N 3-. From UV/vis-reflectance data a band gap of ~4.0 eV was estimated. Doping with Eu 2+ shows promising luminescence properties of λ em = 670 nm with an fwhm ~1970 cm -1 . Furthermore, anomalous luminescence phenomena, like trapped-exciton emission were identified and considered. Ba[Mg 3 SiN 4 ]:Eu 2+ is a further narrow-band red-emitting phosphor and is discussed concerning the structure-property relations of recently reported Eu 2+ -doped nitrides with narrow-band red emission.
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