The observation of persistent spectral hole burning (PSHB) in Eu3+-doped aluminosilicate glass at 77 K is reported in this letter. The homogeneous linewidth of the 7F0→ 5D0 transition is measured to be ∼0.5 Å by both PSHB and fluorescence line narrowing techniques. The ratio of inhomogeneous-to-hole widths at 77 K is 45. The 7F0→ 5D0 transition is visible directly in transmission due to the high concentration of Eu3+.
Transmission electron microscopy and carrier concentration measurements are used to characterize the layer interdiffusion (Al-Ga interdiffusion) mechanism of a Se-doped AlxGa1−xAs-GaAs superlattice (SL) under high-temperature annealing. By varying the annealing environment and comparing the results with similarly annealed undoped SL’s and Mg-doped SL’s, we find that the layer interdiffusion occurs through interaction of the Se impurity with native defects associated with As-rich conditions, the most likely of which is the column III vacancy.
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