The present investigation deals with the effect of calcination temperature on the structural and thermoluminescent (TL) properties of Zn2SiO4 materials. For this study, Zn2SiO4 was prepared via a simple hydrothermal route and calcinated at temperatures from 700°C to 1100°C in an air atmosphere. TL data of all Zn2SiO4 samples showed two peaks at around 240°C and 330°C due to the formation of the luminescence centre during X‐ray irradiation. More interestingly, the Zn2SiO4 sample calcinated at 900°C exhibited a shift in the TL peak (282°C and 354°C) with an optimal TL intensity attributed to its good crystallinity with a well‐defined hexagonal plate‐like morphology. X‐ray‐irradiated Zn2SiO4 samples calcinated at 900°C exhibited a high‐temperature TL glow curve peak, suggesting that the present material could be used for high‐temperature dosimetry applications.
A series of novel lead-free (1-x)(Na 0.5 Bi 0.5 )TiO 3 -xBaSnO 3 , (x=0.00, 0.05, 0.10) ceramics were fabricated by solid-state air sintering route and their dielectric and microstructural properties were studied. Various experimental methods to characterize the fabricated ceramics such as PXRD, Raman spectra, SEM-EDS, UV-visible and dielectric studies. All the ceramics were crystallized by rhombohedral symmetry using PXRD and Rietveld profile refinement technique. The experimental atomic charge density distribution studies were performed and the bonding characteristics were analyzed. With increase of BSN content, the average grain size decreased and was characterized by scanning electron microscopy (SEM) technique. Energy dispersive x-ray (EDS) spectra indicate the presence elements and the diffusion of BSN into the rhombohedral phase of NBT matrix. The optical bandgap was determined by UV-Visible spectra and the values are found to be 3.05, 3.10 and 3.12 eV. The temperature dependence of dielectric constant (ε) provides evidence for dielectric anomalous behaviour in the higher doping of BSN concentration.
Vanadium-doped Zinc Silicate (Zn2SiO4) phosphors were synthesized through the sol-gel method. Structural, morphological and optical techniques were used to investigate the effects of vanadium incorporation on their structure, morphology, and optical behaviour. We reported that vanadium incorporation in Zn2SiO4 phosphors significantly modifies their crystallinity, morphology, and photoluminescence properties. When vanadium is added to Zn2SiO4 phosphors, the energy band gap (Eg) changes from 5.29 to 2.34 eV. Vanadium dopants generate imperfections in Zn2SiO4 phosphors, the leading cause of their emissions in visible regions and quantum yield. Quantum yield is estimated at 7.06 % for Zn1-xVxSiO4 (x = 8%) phosphor. The luminescence decay lifetime of the prominent emissions of vanadium-doped Zn2SiO4 was measured using a double exponential fitting technique, and the average lifetime is 11.7 ns.
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