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A rf-plasma chemical vapor deposition process for selective epitaxial Si growth from SiH4 and SiF4 at a deposition temperature of 300–400 °C is described. Selective epitaxial growth is obtained as a balance of deposition precursors versus etching by F species. Also, the results indicate that a high H-surface coverage is not essential to deposit crystalline Si films by very low temperature rf-plasma chemical vapor deposition. P-doped films with a mobility of 80 cm2/V s and a carrier concentration of 3×1018 cm−3 are reported.

ReceivedThe heliclty, h-, of ~-m n-decay has been determined as poSltlve (h->/+0.90) from the average polarlzatmn, Pay -= , of 12B produced m the ~-+ 12C ~ v~ + 12B reactmn We obtain also dynamical reformation on u-capture 0) the weak magnetism form factor, t~ = 4.5 +-1 1, and (n) the sum of the reduced pseudoscalar (gp) and the 2nd class induced tensor (gT) couphngs versusg A, (gp +gr)/gA = 7 1 -+ 2 7 The latter result, adopting the "canonical" value ofgp/gA, leads to gT/gA = +1 -+ 2.7 which is compatible with zero and m strong contradiction wlth the value ~ -6 recently advocated by Kubodera, Delorme and Rho

Abstractμc-Si:H:F can be deposited by if plasma-CVD of fluorinated gas sources like SiF4 and SiH2F2, mixed with H2 and/or SiH4. However, this growth process is usually not selective: the layers are deposited on SiO2 as well as on Si substrates. In this paper, selective growth from SiF4 + SiH4 is reported. N+ Si layers were deposited on <100> Si and poly-Si with a conductivity up to 300 resp. 100 S/cm. The selective growth process was applied for Source and Drain regions of poly-Si thin film transistors on insulating substrate.

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