As device dimensions approach 1 ~m, narrow channel effects are becoming more and more critical. In a LOCOS structure, these effects are essentially due to lateral diffusion of the field threshold implant during oxidation. EBIC, SIMS, and preferential chemical etching have been used to investigate the effects of high pressure oxidation on lateral and in-depth diffusion of boron. It has been found that lateral and vertical diffusion of boron is reduced by 0.20 and 0.33 ~m, respectively, when the pressure increases from 1 to 20 bar. For a 3 t~m linewidth test device, the observed reduction of the lateral diffusion of boron with increased pressure is shown to correspond to a 22% increase in the width of the active regions. The actual shape of the boron-doped region under the bird's beak has been deduced from EBIC measurements and preferential chemical etching within 0.06 ~m accuracy. In addition, the boron segregation coefficient at the Si/SiO2 interface is given as a function of pressure.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-03-30 to IP i Courtesy of Dr. P. L. F. Hemment, Surrey University, Guildford, Engl~nd. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-03-30 to IP
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