Cu2S-CdS photovoltaic cells have been produced on single crystal CdS substrates using the dry barrier process. Measurements of their current-voltage characteristics the spectral distribution of the photovoltaic response, and the infrared quenching of photocapacitance have been used to evaluate effects occurring at the interface and in the depletion region of the CdS, in cells heated in oxidising and reducing atmospheres to enhance their efficiency. The photocapacitance studies show that copper diffused into the CdS and produced deep acceptors, with hole ground and excited states 1.1 and 0.35 eV above the valence band. Evidence was obtained which suggests that heating in air leads to acceptor-like states at the interface, 0.2 eV below the conduction band. The measured copper profile in the CdS was anomalous, and indicates that more than one diffusing species was active.
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