Microwave transmission through semiconductors has been widely studied, both experimentally and theoretically, by many workers (1 to 4) in the Faraday configuration to investigate the transport properties of the semiconductors. The present paper reports an experimental technique (X-band) for measuring the transmitted power through semiconductors in Voigt configuration. Free carrier absorption of linearly polarized waves a s a function of magnetic field perpendicular to the propagation direction (Voigt configuration) has been studied in n-type germanium samples.A right-handed system of axes (1 to 3) is chosen such that the incident radiation is propagated along direction 1 and the magnetic field is parallel to direction 3. The . expression f o r the current density is(1)The two wave equations with independent components a r e (5)The complex refractive indices a r e given by .This means, in general, there a r e two types of waves propagating in the sample, the type I1 wave, corresponding to a plane wave polarized in direction 2 and the type I11 wave, corresponding to a plane wave polarized in direction 3. For the isotropic case, i.e. B = C = 0 , the complex refractive indices for the two types of waves a r e (5) 2 2 nI = A , n,, = D .
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