Dramatic improvement of current–voltage (I–V) performance, especially
the fill factor (FF) observed in the Cu(InGa)Se2-based thin-film circuits with
Zn(O, S, OH)
x
buffer after postdeposition light soaking is discussed in this
study. Considering the composition of Zn(O, S, OH)
x
buffer and the reversible
behavior with respect to postdeposition light soaking, a model is proposed, in which
H2O molecules released by the dehydration of Zn(OH)2 in the
Zn(O, S, OH)
x
buffer are considered to play a dominant role in this behavior.
Based upon this model, attempts to stabilize the pn heterojunction by making the
reversible behavior irreversible are, for the first time, successfully achieved by
adjusting the postdeposition light-soaking conditions. The reduction of the
Zn(OH)2 concentration in the Zn(O, S, OH)
x
buffer through the combination
of heating at 130°C for at least 40 min and irradiation using a constant-light
solar simulator contributes to stabilizing the pn heterojunction and improving the
I–V performance as well as the electrical yield.
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