We study the metastable equilibrium properties of the two-dimensional Potts model with heat-bath transition rates using a novel expansion. The method is especially powerful for large number of state spin variables and it is notably accurate in a rather wide range of temperatures around the phase transition.
We study the kinetics of the two-dimensional q > 4-state Potts model after a shallow quench slightly below the critical temperature and above the pseudo spinodal. We use numerical methods and we focus on intermediate values of q, 4 < q ≤ 100. We show that, initially, the system evolves as if it were quenched to the critical temperature. The further decay from the metastable state occurs by nucleation of k out of the q possible phases. For a given quench temperature, k is a logarithmically increasing function of the system size. This unusual finite size dependence is a consequence of a scaling symmetry underlying the nucleation phenomenon for these parameters.
Device performance of solution‐processed 2D semiconductors in printed electronics has been limited so far by structural defects and high interflake junction resistance. Covalently interconnected networks of transition metal dichalcogenides potentially represent an efficient strategy to overcome both limitations simultaneously. Yet, the charge‐transport properties in such systems have not been systematically researched. Here, the charge‐transport mechanisms of printed devices based on covalent MoS2 networks are unveiled via multiscale analysis, comparing the effects of aromatic versus aliphatic dithiolated linkers. Temperature‐dependent electrical measurements reveal hopping as the dominant transport mechanism: aliphatic systems lead to 3D variable range hopping, unlike the nearest neighbor hopping observed for aromatic linkers. The novel analysis based on percolation theory attributes the superior performance of devices functionalized with π‐conjugated molecules to the improved interflake electronic connectivity and formation of additional percolation paths, as further corroborated by density functional calculations. Valuable guidelines for harnessing the charge‐transport properties in MoS2 devices based on covalent networks are provided.
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