A deep ultraviolet (DUV) nitride planar micro cavity with a double-side HfO 2 /SiO 2 DBR structure was fabricated. An AlGaN-based quantum dots (QDs) epilayer was used as the active layer. The epilayers were grown by molecular beam epitaxy (MBE) on sapphire substrate with a thin GaN buffer. Cavity modes at 305, 314, 323 and 335 nm were observed by photoluminescence. Optical losses of the order of 103 cm-1 were deduced from the Q value of the cavity modes. An analysis of the surface scattering losses and absorption of the epilayer was performed. The result suggests that surface scattering from the surface roughness appearing after LLO is the main cause for optical loss,. A method is proposed to reduce the impact of scattering loss by placing the roughness layer at the node of the optical field.
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