Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunnelling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system , and exclude the known alternative explanations that invoke disorder or a nonuniform chemical potential.

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.

Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowiremetal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1 T.

Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (∼0.5 T), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two-dimensional electron gases, and topological insulators and holds relevance for topological superconductivity and quantum computation.

The motion of an electron and its spin are generally not coupled. However in a one-dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here, we report measurements of a quantum point contact in an indium antimonide nanowire. At magnetic fields exceeding 3 T, the 2 e 2/h conductance plateau shows a re-entrant feature toward 1 e 2/h which increases linearly in width with magnetic field. Rotating the magnetic field clearly attributes this experimental signature to SOI and by comparing our observations with a numerical model we extract a spin-orbit energy of approximately 6.5 meV, which is stronger than the spin-orbit energy obtained by other methods.

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 K by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of [Formula: see text] cm(2) V(-1) s(-1). We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.

We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12 nm. By performing simulations using a Schrödinger-Poisson solver, it is confirmed that confined states are present in the InAs shell, which are depleted if the shell thickness is below a threshold value. The existence of a tubular-shaped conductor is proved by performing magnetoconductance measurements at low temperatures. Here, flux periodic conductance oscillations are observed which can be attributed to transport in one-dimensional channels based on angular momentum states.

Magnetotransport experiments on epitaxial GaAs/InAs core/shell nanowires are performed in which the InAs shell forms a tube-like conductive channel around the highly resistive GaAs core. The core/shell nanowires are grown by molecular beam epitaxy. It is found that the nanowire conductance oscillates with the magnetic field oriented parallel to its axis, with a period of the magnetic flux quantum φ 0 = h/e. Related to that, it is shown that the electronic transport is mediated by closed loop quantum states encircling the wire axis rather than by electron interference of partial waves. By means of a gate voltage the conductance at zero magnetic field can be changed between an oscillation minimum and maximum. The experimental findings are supported by numerical calculations.