Molybdenum disulfide (MoS2) is one of the compounds discussed nowadays due to its outstanding properties that allowed its usage in different applications. Its band gap and its distinctive structure make it a promising material to substitute graphene and other semiconductor devices. It has different applications in electronics especially sensors like optical sensors, biosensors, electrochemical biosensors that play an important role in the detection of various diseases’ like cancer and Alzheimer. It has a wide range of energy applications in batteries, solar cells, microwave, and Terahertz applications. It is a promising material on a nanoscale level, with favorable characteristics in spintronics and magnetoresistance. In this review, we will discuss MoS2 properties, structure and synthesis techniques with a focus on its applications and future challenges.

Molybdenum disulfide (MoS2) is a promising transition metal dichalcogenide (TMD) that has exceptional electronic, magnetic, optical, and mechanical properties. It can be semiconducting, superconducting, or an insulator according to its polymorph. Its bandgap structure changes from indirect to direct when moving towards its nanostructures, which opens a door to bandgap engineering for MoS2. Its supercapacitive and catalytic activity was recently noticed and studied, in order to include this material in a wide range of energy applications. In this work, we present MoS2 as a future material for energy storage and generation applications, especially solar cells, which are a cornerstone for a clean and abundant source of energy. Its role in water splitting reactions can be utilized for energy generation (hydrogen evolution) and water treatment at the same time. Although MoS2 seems to be a breakthrough in the energy field, it still faces some challenges regarding its structure stability, production scalability, and manufacturing costs.

Hybrid organic–inorganic perovskite (HOIP) photovoltaics have emerged as a promising new technology for the next generation of photovoltaics since their first development 10 years ago, and show a high-power conversion efficiency (PCE) of about 29.3%. The power-conversion efficiency of these perovskite photovoltaics depends on the base materials used in their development, and methylammonium lead iodide is generally used as the main component. Perovskite materials have been further explored to increase their efficiency, as they are cheaper and easier to fabricate than silicon photovoltaics, which will lead to better commercialization. Even with these advantages, perovskite photovoltaics have a few drawbacks, such as their stability when in contact with heat and humidity, which pales in comparison to the 25-year stability of silicon, even with improvements are made when exploring new materials. To expand the benefits and address the drawbacks of perovskite photovoltaics, perovskite–silicon tandem photovoltaics have been suggested as a solution in the commercialization of perovskite photovoltaics. This tandem photovoltaic results in an increased PCE value by presenting a better total absorption wavelength for both perovskite and silicon photovoltaics. In this work, we summarized the advances in HOIP photovoltaics in the contact of new material developments, enhanced device fabrication, and innovative approaches to the commercialization of large-scale devices.

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Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1–10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS2/graphene). Nanoribbons of MoS2/graphene heterostructure are laid over a SiO2 substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.