Organic radicals are fascinating materials because of their unique properties, which make them suitable for a variety of applications. Their synthesis may be challenging, and big efforts have focused on chemical stability. However, introducing a new material in electronics not only requires chemically stable molecules but also stable monolayers and thin films in view of their use in devices. In this work, we have investigated the thin films of a derivative of the Blatter radical that was synthesized bearing in mind the thermodynamic factors that govern thin film stability. We have proved our concept by investigating the electronic structure, the paramagnetic character, and stability of the obtained films under UHV and ambient conditions by in situ X-ray photoelectron spectroscopy, ex situ atomic force microscopy, and electron paramagnetic resonance spectroscopy.

The collective properties of self-assembled nanoparticles with long-range order bear immense potential for customized electronic materials by design. However, to mitigate the shortcoming of the finite-size distribution of nanoparticles and thus, the inherent energetic disorder within assemblies, atomically precise nanoclusters are the most promising building blocks. We report an easy and broadly applicable method for the controlled self-assembly of atomically precise Au32(nBu3P)12Cl8 nanoclusters into micro-crystals. This enables the determination of emergent optoelectronic properties which resulted from long-range order in such assemblies. Compared to the same nanoclusters in glassy, polycrystalline ensembles, we find a 100-fold increase in the electric conductivity and charge carrier mobility as well as additional optical transitions. We show that these effects are due to a vanishing energetic disorder and a drastically reduced activation energy to charge transport in the highly ordered assemblies. This first correlation of structure and electronic properties by comparing glassy and crystalline self-assembled superstructures of atomically precise gold nanoclusters paves the way towards functional materials with novel collective optoelectronic properties.

We investigate the time-resolved photoelectric response of WSe2 crystals on glass and flexible polyimide substrates to determine the effect of a changed dielectric environment on the speed of the photodetectors....

Flexible electronics manufacturing technologies are essential and highly favored for future integrated photonic and electronic devices. Direct laser induced writing (DIW) of metals has shown potential as a fast and highly variable method in adaptable electronics. However, most of the DIW procedures use silver structures, which tend to oxidize and are limited to the micrometer regime. Here, a DIW technique is introduced that not only enables electrical gold wiring of 2D van-der-Waals materials with sub-μm structures and 100 nm interspacing resolution but is also capable of fabricating photo switches and field effect transistors on various rigid and elastic materials. Light sensitive metalloid Au 32 -nanoclusters serve as the ink that allows for low-power cw-laser exposure without further post-treatment. With a simple lift-off procedure, the unexposed ink can be removed. The technique realizes ultrafast, high resolution, and high precision production of integrated electronics and may pave the way for personalized circuits even printed on curved surfaces.

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