We experimentally study the transverse distribution of intensity noise in the far field of a single-mode semiconductor laser. We show that a large amount of noise is present in the higher-order nonlasing transverse modes (parallel to the diode junction). Furthermore, correlations between the TE 00 and the TE 10 modes are observed.
Abstract.We consider a design approach to reduce unwanted zero-order intensity due to profile depth error in diffractive elements. Our method is based on addition of local bias phase to a binary element phase, leading to the introduction of a third phase level. We show theoretically and experimentally that gratings obtained with such modifications are more tolerant to profile depth error than conventionally designed binary or multilevel elements, thus reducing the appearance of unwanted zero order.
Abstract.We consider a design approach to reduce unwanted zero-order intensity due to profile depth error in diffractive elements. Our method is based on addition of local bias phase to a binary element phase, leading to the introduction of a third phase level. We show theoretically and experimentally that gratings obtained with such modifications are more tolerant to profile depth error than conventionally designed binary or multilevel elements, thus reducing the appearance of unwanted zero order.
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