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An effective encapsulation solution for flexible CIGS is urgently needed to ensure a competitive market entry of the technology. In this work, we demonstrate the feasibility to effectively encapsulate module-level (10×10 cm 2 ) CIGS/glass solar cells by employing a thin Al2O3 barrier layer grown by atomic layer deposition (ALD). As determined by a direct methodology, 10 nm ALD-Al2O3 is proved to be sufficient in preventing electrical degradation of the Al:ZnO (AZO) window layer upon exposure to damp heat test (DHT) and equally effective to encapsulate 10×10 cm 2 CIGS/glass mini-modules by efficient blockage of moisture ingress. CIGS mini-modules encapsulated by ALD-Al2O3 barrier layer retain an average of 80% and 72% of initial efficiency after 1000 and 2000 h of DHT, respectively. Whereas unencapsulated modules drop to an average of 67% (1000 h DHT) and 22% (2000 h DHT) of initial efficiency. Thanks to the presence of ALD-Al2O3 barrier layer, less electrical degradation occurred in AZO window layer and P3 interconnection; also less shunting paths appeared -both led to a lower FF drop in encapsulated CIGS mini-modules. However, an issue of Na migration out of the CIGS layer is observed, which negatively impacts the module stability during DHT.

The authors investigated the effect of an applied high voltage (1 kV) across the thickness of a soda-lime glass substrate of Cu(In,Ga)Se2 (CIGS) thin-film solar cells. Two types of CIGS cells were tested, differing only in the deposition process of the molybdenum (Mo) back contact. Whilst one cell type was susceptible to potential induced degradation (PID), the other exhibited highly increased stability against PID. PID occurs for PID-susceptible cells after the transfer of a certain amount of charge through the soda-lime glass substrate when the Mo back contact of the cell operates as a cathode (negatively biased versus backside of the substrate). Capacitance–voltage and electron-beam-induced current measurements showed an enlarged space charge region expanding to the Mo back contact and a lowered doping density by a negative potential for PID-susceptible cells. Glow discharge optical emission spectroscopy (GDOES) revealed an accumulation of sodium (Na) in the solution-grown CdS buffer layer and a segregation on the surface of the ZnO:Al window layer for higher charges for PID-susceptible cells. Cells with increased PID immunity did not show an increase of Na for charges up to around 9 mC/cm². We demonstrate that it is possible to improve the PID stability of CIGS solar cells by modification of the molybdenum back contact.

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In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as open-circuit voltage, fill factor and the efficiency at normal operation conditions. A phototransistor model was proposed in previous works and could satisfactorily explain specific effects associated with the back contact barrier, such as the dependence of the saturated current in the forward bias on the illumination level. The effect of this contribution is also studied in this research in the context of metastable parameter drift, typical for Cu (In, Ga) Se2 thin-film solar cells, as a consequence of different bias or light soaking treatments under high-temperature conditions. The impact of the back contact barrier on Cu (In, Ga) Se2 thin-film solar cells is analyzed based on experimental measurements as well as numerical simulations with Technology Computer-Aided Design (TCAD). A barrier-lowering model for the molybdenum/Cu (In, Ga) Se2 Schottky interface was proposed to reach a better agreement between the simulations and the experimental results. Thus, in this work, the phototransistor behavior is discussed further in the context of metastabilities supported by numerical simulations.