The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature deeply influences the properties of the supercurrent. In recent years, considerable efforts have focused on the coupling of superconductors to the surface states of a three-dimensional topological insulator. In such a material, an unconventional induced p-wave superconductivity should occur, with a doublet of topologically protected gapless Andreev bound states, whose energies vary 4π-periodically with the superconducting phase difference across the junction. In this article, we report the observation of an anomalous response to rf irradiation in a Josephson junction made of a HgTe weak link. The response is understood as due to a 4π-periodic contribution to the supercurrent, and its amplitude is compatible with the expected contribution of a gapless Andreev doublet. Our work opens the way to more elaborate experiments to investigate the induced superconductivity in a three-dimensional insulator.

The topic of two-dimensional topological insulators has blossomed after the first observation of the quantum spin Hall (QSH) effect in HgTe quantum wells. However, studies have been hindered by the relative fragility of the edge states. Their stability has been a subject of both theoretical and experimental investigation in the past decade. Here, we present a new generation of high quality (Cd,Hg)Te/HgTe-structures based on a new chemical etching method. From magnetotransport measurements on macro- and microscopic Hall bars, we extract electron mobilities μ up to about 400 × 10 cm/(V s), and the mean free path λ becomes comparable to the sample dimensions. The Hall bars show quantized spin Hall conductance, which is remarkably stable up to 15 K. The clean and robust edge states allow us to fabricate high quality side-contacted Josephson junctions, which are significant in the context of topological superconductivity. Our results open up new avenues for fundamental research on QSH effect as well as potential applications in spintronics and topological quantum computation.

Extrinsic disorder strongly affects the performance of graphene-based quantum dots. The standard SiO2 substrate is generally considered to be one major factor besides edge-induced disorder. In this report we present the fabrication of lithographically defined quantum dots on SiO2 with short and narrow constrictions and different central island sizes. Low temperature transport measurements display distinct Coulomb-blockade peaks with amplitudes exceeding what is commonly observed experimentally. The analysis of the normalized Coulomb-blockade peak spacing shows a size dependence, which has not previously been observed for devices on SiO2. Furthermore, a quantitative comparison of the peak spacing distribution to the literature shows that one of the two devices compares favorably to a similar sized dot placed on hexagonal boron nitride, which is known to reduce the substrate disorder. Our findings suggest that the other sources of extrinsic disorder, such as lithography residues, may play an important role for the performance of large graphene quantum dots.