Stroke results in the disruption of tissue architecture and is the third leading cause of death in the United States1. Transplanting scaffolds containing stem cells into the injured areas of the brain has been proposed as a treatment strategy2, and carbon nanotubes show promise in this regard, with positive outcomes when used as scaffolds in neural cells3,4 and brain tissues5. Here, we show that pretreating rats with amine-modified single-walled carbon nanotubes can protect neurons and enhance the recovery of behavioural functions in rats with induced stroke. Treated rats showed less tissue damage than controls and took longer to fall from a rotating rod, suggesting better motor functions after injury. Low levels of apoptotic, angiogenic and inflammation markers indicated that aminemodified single-walled carbon nanotubes protected the brains of treated rats from ischaemic injury.

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A new kind of flexible strain sensor based on a reduced graphene oxide field‐effect transistor (rGO FET) with ultrasensitivity, stability, and repeatability for the detection of tensile and compressive strains is demonstrated. The novelty of the rGO FET strain sensor is the incorporation of a rGO channel as a sensing layer in which the electrical resistance can be greatly modified upon application of an extremely low level of strain resulting in an intrinsically amplified sensing signal. The rGO FET device is ultrasensitive to extremely low strain levels, as low as 0.02%. Due to weak coupling between adjacent nanosheets, therefore, upon applying small levels of strain into the rGO thin film, a modulation of the internanosheet resistance (Rinter) is expected, inducing a large change in the transconductance of the rGO FET. Using a simple printing and self‐assembly process, the facile fabrication of an rGO FET array over a large area is also demonstrated. In addition, the device can detect small and rapid physical movements of the human body.

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A reduced graphene oxide field‐effect transistor (R‐GO FET) device has a uniform self‐assembled and networked channel of R‐GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge‐transport mechanisms of the networked R‐GO thin film include charge tunneling through the nanosheet junction and charge‐hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R‐GO thin film.

Detection of the anthrax toxin, the protective antigen (PA), at the attomolar (aM) level is demonstrated by an electrical aptamer sensor based on a chemically derived graphene field-effect transistor (FET) platform. Higher affinity of the aptamer probes to PA in the aptamer-immobilized FET enables significant improvements in the limit of detection (LOD), dynamic range, and sensitivity compared to the antibody-immobilized FET. Transduction signal enhancement in the aptamer FET due to an increase in captured PA molecules results in a larger 30 mV/decade shift in the charge neutrality point (Vg,min ) as a sensitivity parameter, with the dynamic range of the PA concentration between 12 aM (LOD) and 120 fM. An additional signal enhancement is obtained by the secondary aptamer-conjugated gold nanoparticles (AuNPs-aptamer), which have a sandwich structure of aptamer/PA/aptamer-AuNPs, induce an increase in charge-doping in the graphene channel, resulting in a reduction of the LOD to 1.2 aM with a three-fold increase in the Vg,min shift.

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