Weyl semimetals host topologically protected surface states, with arced Fermi surface contours that are predicted to propagate through the bulk when their momentum matches that of the surface projections of the bulk's Weyl nodes. We used spectroscopic mapping with a scanning tunneling microscope to visualize quasiparticle scattering and interference at the surface of the Weyl semimetal TaAs. Our measurements reveal 10 different scattering wave vectors, which can be understood and precisely reproduced with a theory that takes into account the shape, spin texture, and momentum-dependent propagation of the Fermi arc surface states into the bulk. Our findings provide evidence that Weyl nodes act as sinks for electron transport on the surface of these materials.

Silicon can be isotopically enriched, allowing for the fabrication of highly coherent semiconductor spin qubits. However, the conduction band of bulk Si exhibits a six-fold valley degeneracy which may adversely impact the performance of silicon quantum devices. To date, the spatial characterization of valley states in Si has remained limited. Moreover, techniques for probing valley states in functional electronic devices are needed. Here, we describe a cryogen-free scanning gate microscope for the characterization of Si/Si0.7Ge0.3 quantum devices at mK temperatures. The newly built instrument is the first cryogen-free scanning gate microscope capable of forming and measuring a quantum dot on a Si/SiGe device with an overlapping gate structure without compromising the ability to host multiple DC and microwave lines for quantum control experiments. The microscope is based on the Pan-walker design, with coarse positioning piezostacks and a fine scanning piezotube. A tungsten microscope tip is attached to a tuning fork for active control of the tip-to-sample distance. To reduce vibration noise from the pulse tube cooler, we utilize both active and passive vibration isolation mechanisms and achieve a root-mean-square noise in z of ∼2 nm. Our microscope is designed to characterize fully functioning Si/Si0.7Ge0.3 quantum devices. As a proof of concept, we use the microscope to manipulate the charge occupation of a Si quantum dot, opening up a range of possibilities for the exploration of quantum devices and materials.

Conventional transport methods provide quantitative information on spin, orbital, and valley states in quantum dots but lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution at the expense of speed. Working to combine the spatial resolution and energy sensitivity of scanning probe microscopy with the speed of microwave measurements, we couple a metallic tip to a Si/SiGe double quantum dot (DQD) that is integrated with a charge detector. We first demonstrate that the dc-biased tip can be used to change the occupancy of the DQD. We then apply microwaves through the tip to drive photon-assisted tunneling (PAT). We infer the DQD level diagram from the frequency and detuning dependence of the tunneling resonances. These measurements allow the resolution of ∼65 μeV excited states, an energy consistent with valley splittings in Si/SiGe. This work demonstrates the feasibility of scanning gate experiments with Si/SiGe devices.