Background
This study aimed to evaluate the current overall preventable trauma death rate (PTDR) in Korea and identify factors associated with preventable trauma death (PTD).
Methods
The target sample size for review was designed to be 1,131 deaths in 60 emergency medical institutions nationwide. The panels for the review comprised trauma specialists working at the regional trauma centers (RTCs); a total of 10 teams were formed. The PTDR and factors associated with PTD were analyzed statistically.
Results
Of the target cases, 943 were able to undergo panel review and be analyzed statistically. The PTDR was 30.5% (6.1% preventable and 24.4% possibly preventable). Those treated at a RTC showed a significantly lower PTDR than did those who were not (21.9% vs. 33.9%;
P
= 0.002). The PTDR was higher when patients were transferred from other hospitals than when they directly visited the last hospital (58.9% vs. 28.4%;
P
= 0.058; borderline significant). The PTDR increased gradually as the time from accident to death increased; a time of more than one day had a PTDR 14.99 times higher than when transferred within one hour (95% confidence interval, 4.68 to 47.98).
Conclusion
Although the PTDR in Korea is still high compared to that in developed countries, it was lower when the time spent from the accident to the death was shorter and the final destined institution was the RTC. To reduce PTDR, it is necessary to make an effort to transfer trauma patients to RTCs directly within an appropriate time.
GaN films were grown on Si(100) substrate by atomic layer deposition (ALD) using GaCl3 and NH3. Growth conditions were identified for which the growth rate exhibited a plateau at ∼2.0Å∕cycle, consistent with self-limiting adsorption. A relatively wide temperature window (500–750°C) for ALD growth mode was also established for one flow sequence schedule. In this limit, both the (0002) and (101¯1) orientations of GaN were evident, which was attributed to the competition between vertical and lateral growths. Cl incorporation was detected by x-ray photoelectron spectroscopy for samples prepared with long GaCl3 exposure time. It is postulated that gas phase formation of (ClGaNH)n with n=1–3 [Kovács, Inorg. Chem. 41, 3067 (2002)] results in higher Cl content.
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