The densification of SnO2 (0.9 mol)–Sb2O3 (0.1 mol) solid solution without any additives was studied by conventional and field‐activated sintering technique (FAST). FAST sintering achieved a relative density value of 92.4% at 1163 K for 10 min versus 61.3% in conventional sintering at 1273 K for 3 h. An abnormal reduction of the IR transmittance and a semiconductor defect structure with only one donor level in the SnO2 energy gap were noticed in the FAST‐sintered as compared with the conventionally sintered Sn0.82Sb0.18O2 solid solution. A high charge carrier concentration (i.e., electronic conduction) was shown in the FAST‐sintered sample by conductivity measurements and the negative values of the Seebeck coefficient.

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