We consider lowest energy states of electrons confined in asymmetrical circular vertically stacked double InAs/GaAs quantum dot molecule. The energies where computed by using the effective three-dimensional one band Hamiltonian, the energy (non-parabolic) and position dependent electronic effective mass approximation, and the Ben Daniel-Duke boundary conditions with the finite hard wall confinement potential. We demonstrated theoretically a possibility to drive dynamically coupled electronic states (relocate electronic wave functions from one dot to another) by applying external magnetic field.1 Introduction Recent advances in the fabrication of semiconductor nano-scale-objects stimulated much attention to the study of structural, optical, and electronic properties of semiconductor quantum dots (see for example [1]). Especially, during the last decade it has become possible to fabricate realistic semiconductor quantum dots in laboratories. Various experimental results demonstrate that InAs/GaAs quantum dots can have diverse shapes, such as disk, ellipsoid, or conical shapes with a circular top view cross section and a large area-to-height aspect ratio (see for instance [2,3]). Coupled quantum dots allow us to form an artificial molecule. In this molecule we can adjust the inter-dot distance and through that to control coupling between electronic states localized in different dots. The ability to control coherent coupling between double quantum dots may open possibility for designing quantum logic gates (see [4,5] and references therein). The inter-dot distance control is an example of a static approach to the gate's design. Another possibility to control dynamically the coupling lies in application of external fields [6].In this work we demonstrate theoretically an opportunity to drive dynamically electronic states by applying external magnetic field to two vertically coupled InAs/GaAs quantum dots.
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