The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with InP leads to falling of integrated photoluminescence intensity, however, laser diodes with In0.53Ga0.31Al0.16As waveguide layers demonstrate a higher differential gain compared to laser diodes with In0.53Ga0.27Al0.20As waveguide. Keywords: quantum well, molecular-beam epitaxy, photoluminescence, electroluminescence.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.