Abstract:A new type of millimeter-wave quasi-optical variable phase shifter which exploits the dielectric anisotropy of liquid crystal (LC) materials is presented. The device is operated in transmission mode and consists of inductive and capacitive metal grids, each patterned on a dielectric substrate, which are separated by a thin layer of LC. The grids together with the LC form a parallel resonant circuit. Prototype devices with a 25-μm-thick LC layer for use at a millimeterwave frequency of 50 GHz were designed and fabricated. Experiments performed at U-band frequencies show that a phase shift of 7.8 • is obtained with a low insertion loss of ∼ 0.6 dB at the resonant frequency by applying a control signal of 20 V. Good time response for the device is demonstrated. It is suggested that the phase shift attainable with the device can be further enhanced by using LC materials with larger dielectric anisotropy and/or thinner dielectric substrates. Keywords: grid structures, liquid crystals, millimeter wave, phase shifters, quasi optics Classification: Microwave and millimeter wave devices, circuits, and systems
References
A novel type of slit probe incorporating a micromachined silicon (Si) chip for millimeter-wave scanning near-field microscopy is proposed. To improve the spatial resolution and image contrast attainable in millimeter-wave microscopy, a metal-coated Si chip with a microslit aperture fabricated using a bulk micromachining technique was attached to the tip of an ordinary slit-type probe at the end of a tapered rectangular waveguide. The design and fabrication of the Si chip are described, and the results from experiments performed at U-band (40-60 GHz) frequencies to demonstrate the feasibility of this new probe configuration are presented.
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