Ab initio molecular orbital methods were applied to screening tests of the organometallic source materials suitable for the photo-assisted low-temperature growth of stoichiometric epitaxial films of group-Ill nitrides. The molecular properties of dimethylgalliumnitrene ( (CH3)2GaN ), dimethylaluminumnitrene ( (CH3)2AIN ), and dimethylboronnitrene ( (CH3)2BN ) were examined in terms of the stability and the reactivity. Also clarified were the photolytic and the pyrolytic decomposition mechanisms of the corresponding azides. Based on these theoretical analyses, we confirmed the applicability of beams of (CH3)2GaN and (CH3)2A1N produced by the method of photodissociation of energetic compound beams to the epitaxial growth.
Ion-current difference measurement by light intensity modulation ( lCD ) is introduced as a convenient method to determine the number flux of neutral free radicals produced by photo-deionization of a negative ion beam for the purpose of surface-reaction-selective device processing. The lCD setup developed in this study exhibited the high precision and the high sensitivity under the experimental condition that the beam kinetic energy of the neutral free radicals was higher than 10 keV.
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