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Formation of organosilane monolayer templates using ultraviolet and electron-beam (EB) lithography was investigated. The oligonucleotides were covalently immobilized with high selectivity only to the amino-monolayer modified regions locally formed on the template surfaces at micro and nanometer scale. By using EB lithography, patterned immobilization in nanometer scale, as small as 20 nm, was achieved.

Sheet-shaped carriers, having both obverse and reverse surfaces and thus a large contact area for targeting a site, have several advantages over spherical-shaped carriers, which have an extremely small contact area for targeting sites. Here, we proposed a novel method to prepare a free-standing ultrathin and biocompatible nanosheet having heterosurfaces, by a combination of four processes: (1) specific adsorption of recombinant human serum albumin (rHSA) molecules onto a patterned octadecyltrimethoxysilane self-assembled monolayer region (ODS-SAM), (2) preparation of nanosheets of rHSA molecules bearing thiol groups (SH-rHSA) via two-dimensionally disulfide crosslinking, (3) surface modification of the resulting nanosheet, and (4) preparation of the free-standing nanosheet by detachment from the ODS-SAM. The SH-rHSA molecules at pH 5.0 and a concentration of 1 microg/mL were specifically adsorbed on the patterned ODS-SAM regions by hydrophobic interaction, and were two-dimensionally crosslinked in the presence of copper ion as an oxidant. The rHSA-nanosheets were then simply detached from the ODS-SAM by treatment with surfactant. We succeeded in the preparation of rectangular (10 microm x 30 microm) and ultrathin (4.5 +/- 1.0 nm) rHSA-nanosheets on a patterned ODS-SAM, and could also obtain free-standing rHSA-nanosheets having heterosurfaces by surface modification with fluorescent latex beads. Thus, the rHSA-nanosheets having heterosurfaces could be regarded as a new biomaterial for drug carriers, hemostatic reagents, wound dressing for burn injury, and so forth.

Programming Sequence A 16Gb 16-level-cell (16LC) NAND Flash memory using 70nm Fig.5 shows the programming and verification sequence of 16LC. At Design Rule has been developed. This 16LC NAND flash memory first, only Level "1" is verified, and then Level "1" and Level "2" are can store 4bits in a cell which enabled double bit density comparing to verified. In the middle ofthe sequence, all the levels are verified. The 4-level-cell (4LC) NAND flash with the same design rule. New pro-lower levels are programmed earlier. So, during Level "1" verification, gramming method achieves 0.62MB/s programming throughput.the device checks whether all the cells to be programmed to Level "1"References which is connected to each bit-line and has five latches. Only, Latch [1] T. Hara, et al., "A 146mm2 8Gb NAND Flash Memory with is connected to external. At the beginning ofprogram operation, 70nm CMOS Technology", ISSCC Digest of Technical Papers, pp.