Influence of the silicon nanocrystal size on the 1.54 μ m luminescence of Er-doped SiO / SiO 2 multilayers J. Appl. Phys. 105, 036101 (2009); 10.1063/1.3057386 a -Si nanolayer induced enhancement of the 1.53 μ m photoluminescence in Er 3 + doped a -Al 2 O 3 thin films Enhancement of photoluminescence from Yb and Er co-doped Al 2 O 3 films by an asymmetric metal cavity Appl.
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size converter, the absorption saturation of 5 dB is achieved with a pulse energy of 25 pJ. The switch is integrated with a SiN/AlN waveguide and spot-size converters, and the structure provides the possibility of an integration of the switch with other functional devices. To further improve the coupling loss between the waveguide and the switch, triangular-shaped converters are investigated, demonstrating losses as low as 2 dB/facet.
The effects of Au thin layers on luminescence properties of Er and Yb co-doped Al2O3 films were studied. The 1.54μm emission of Er3+ excited by the energy transfer from Yb3+ is found to be strongly enhanced by placing a Au layer on top of the films. Photoluminescence excitation spectra of the 1.54μm PL of Er3+ and time transients of the 980nm emission of Yb3+ revealed that PL enhancement arises from two different mechanisms. The first one is the enhancement of local electric fields accompanied by the excitation of surface plasmons of rough Au surfaces. The other one is the enhancement of energy transfer rate from Yb3+ to Er3+ caused by the modification of the local photonic mode density at the position of the Yb–Er coupled system.
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