Electrical properties and microstructures of a holmium-doped (Ba1.01Mg0.01)O1.02(Ti0.98Zr0.02)O2 system were studied. Additions of Ho2O3 had little effect in preventing the dielectrics from reducing at high temperature, but the resistivity at low temperature increased with increasing amount of Ho2O3 when treated in oxidizing atmosphere at the cooling stage. From transmission electron micrograph (TEM) observation, it was noted that the microstructure exhibited a grain core-grain shell structure. Newly developed X7R multilayer ceramic capacitors with Ni electrodes revealed highly reliable electrical properties.
The properties of PbCa(Cu, Nb)TiO3–NiSnO3 based pyroelectric ceramics were investigated.
Microstructures were examined by a X-ray microanalysis. The pyroelectric ceramics were consisted of three individual of PbCa(Cu, Nb)TiO3 phase NiSnO3–NiTiO3 compound phase and SnO2 rich phase in a ceramic composition. Pyroelectric properties of the ceramics were F
v of 8.5×10-11 C cm/J and Curie point of 272°. By an addition of NiSnO3 to Pb0.7Ca0.3(Cu1/3Nb2/3)0.05Ti0.95O3, F
v were up to the high value with an increase of P(P=5.8×10-8 C/cm2°C) and a decrease of ε
s
(ε
s
=220).
Electrical properties and microstructures of glass-added barium titanate ceramics were studied. Resistivities of the ceramics were increased markedly by addition of glass components when they were fired in a reducing atmosphere. The flat temperature dependence of dielectric constant were obtained by substituting small amount of Sr and Ca for barium site under the presence of glass components. The multilayer ceramic chip capacitors with nickel electrodes which meet X7R specification have been developed. They exhibited high resistivity (>1012 Ωcm) and high dielectric constant (K=3300).
Characteristics of BL capacitors of semiconductive SrTiO3-base composition with Nb2O5 and CuO added were investigated. The grain growth was required for getting a high apparent dielectric constant under the firing condition in which a liquid phase appeared, and the ceramics with large grains such as 85 µm were fabricated. The apparent dielectric constant of 100,000 and the dissipation factor of less than 0.01 were obtained.
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