Infrared diode laser absorption spectroscopy (IRLAS) was applied to the measurement of SiH3 in a RF silane P-CVD chamber with parallel plate electrodes. The spatial distribution of SiH3 radicals between the electrodes was measured to obtain the incident flux density of SiH3 to the electrode surface. The growth rate of a-Si:H was also measured in the same plasma. These data were used to estimate the contribution of SiH3 to a-Si:H thin-film growth.
The ν2 band of the silylene SiH2 molecule in X̃ 1 A1 was observed for the first time in the gas phase by using infrared diode laser kinetic spectroscopy. Silylene molecules were generated by the photolysis of phenylsilane at 193 nm. The observed spectrum was analyzed to determine the rotational and centrifugal distortion constants in the ground and v2 =1 states and the band origin ν0 =998.6241(3) cm−1 with one standard deviation in parentheses. The significance of the derived parameters is discussed in detail.
We study the dynamics of a three-dimensional laser bullet propagating inside a nonlinear saturable medium. We show that an increase of the pump parameter destabilizes the bullet and leads to its destruction through oscillations with increasing amplitude. We propose an inhomogeneous and anisotropic external excitation mechanism leading to a stable oscillating bullet. By varying the frequency of the external excitation, a stable quasi-in-phase or quasi-antiphase internal state can be reached.
The SiH3 radical density in pulsed silane discharge plasma was measured by infrared diode laser absorption spectroscopy (IRLAS) for three buffer gases and also as functions of the sample pressure and the pulse width. They were compared with the SiH and SiH2 radical densities. The growth rate of a-Si:H thin film was compared with the SiH3 radical density on various plasma conditions. These data were employed to discuss the contribution of SiH3 to a-Si:H thin-film growth.
The SiH3 radical is an important precursor in amorphous silicon thin film formation, but its density in silane plasma has never been measured. In this work, we have developed a method for measuring the SiH3 radical density using an infrared diode laser absorption method and have determined the density in a pulsed SiH4/H2 plasma.
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