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This work presents a voltage mode scheme of a full-wave precision rectifier circuit using an analog building block differential voltage current conveyor transconductance amplifier (DVCCTA) including five NMOS transistors. The proposed design is essentially suited for low voltage and high-frequency input signals. The operation of the proposed rectifier design depends upon the region of operation of NMOS transistors. The output waveform of the presented rectifier design can be made electronically tunable by controlling the bias voltage. The functional correctness and verification of the presented design are performed using 0.25-µm TSMC technology under the supply voltage of ±1.5 V. The absence of a resistor leads to a minimal parasitic effect. To obtain further insight on the robustness of the circuit, a Monte Carlo simulation and corner analysis are also presented. The circuit is verified experimentally by incorporating a breadboard model with the help of commercially available ICs CA3080 (operational transconductance amplifier) and AD844AN (current feedback operational amplifier) and offers remarkable compliance with both theoretical and simulation outcomes. The presented design has been laid out on Cadence virtuoso, which consumes a chip area of 9044 µm2.

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An emulator circuit of Memristor, Memcapacitor, and Meminductor commonly termed as mem-elements has been demonstrated in this article. The circuit has been realized using the technique of current mode, which provides better performance over voltage mode counterparts. The current mode analog building blocks, along with a few passive components, have been used in the presented circuit implementation. The fingerprint characteristics have been observed in both simulation and experimental results, validating the theoretical analysis. The robustness of the presented design has been supported by performing different types of analysis like process corner, temperature, and non-volatility behavior. The mem-elements emulator design has been simulated using 0.18 µm TSMC process parameter, and ± 1.2 V power supply has been used. The commercial ICs AD844 and CA3080 are used for the experimental demonstration of the proposed mem-elements design by making a prototype on a breadboard. A layout area of 4829 µm 2 , 8098 µm 2 , and 8061 µm 2 respectively is required for the Memristor, Memcapacitor, and meminductor circuit. The power consumed by the mem-elements circuit is also provided. A chaotic has been implemented using mem-elements to show the usefulness of the emulator design.

A charge-controlled memristor emulator circuit based on one kind of active device [operational transconductance amplifier (OTA)] using CMOS technology is introduced in this paper. The proposed circuit can be configured in both incremental and decremental types by using a simple switch. The memristor behavior can be electronically tuned by adjusting the transconductance of the OTAs. By changing the value of the capacitor, the pinched hysteresis loop observed in the current versus voltage plane can be held at higher frequencies. The proposed emulator circuit functions well up to 500 kHz. The experiment has been performed using commercially available OTA ICs (CA3080). The experimental demonstration has been carried out for 10, 20 and 120[Formula: see text]kHz. A simple high-pass filter is explained in both configurations to demonstrate the functionality of the proposed memristor emulator. The proposed circuit has been simulated in PSPICE using 0.5-[Formula: see text]m CMOS parameter. The simulated and experimental results validate the theoretical proposition.