This study reported the influence of Al 2 O 3 addition on the TiO 2 doped BaTiO 3 focusing on the microstructure development and dielectric properties of ceramics. The amount of Al 2 O 3 addition was varied from 0.2-1.0 mol% excess. Sintering was studied at 1350 • C for 5, 10, 20 and 40 hours, respectively. Overall, Al 2 O 3 helped to reduce the extent of abnormal grain growth and aided the matrix grain uniformity. Higher content caused the formation of secondary phase and reduced dielectric constant.
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