Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different spectroscopic and microscopic characterizations. Facile, large-area transfer of GNRs onto insulating substrates and subsequent device fabrication demonstrate their promising potential as semiconducting materials, exhibiting high current on/off ratios up to 6000 in field-effect transistor devices. This value is 3 orders of magnitude higher than values reported so far for other thin-film transistors of structurally defined GNRs. Notably, on-surface mass spectrometry analyses of polymer precursors provide unprecedented evidence for the chemical structures of the resulting GNRs, especially the heteroatom doping and heterojunctions. These results pave the way toward the scalable and controllable growth of GNRs for future applications.

Chromium trihalides are layered and exfoliable semiconductors and exhibit unusual magnetic properties with a surprising temperature dependence of the magnetization. By analyzing the evolution of the magnetocrystalline anisotropy with temperature in chromium iodide CrI 3 , we find it strongly changes from K u = 300 ± 50 kJ/m 3 at 5 K to K u = 43 ± 7 kJ/m 3 at 60 K, close to the Curie temperature. We draw a direct comparison to CrBr 3 , which serves as a reference, and where we find results consistent with literature. In particular, we show that the anisotropy change in the iodide compound is more than 3 times larger than in the bromide. We analyze this temperature dependence using a classical model, showing that the anisotropy constant scales with the magnetization at any given temperature below the Curie temperature, indicating that the temperature dependence can be explained by a dominant uniaxial anisotropy where this scaling results from local spin clusters having thermally induced magnetization directions that deviate from the overall magnetization.

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons.Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atomwide GNRs with unprecedented conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs on the electrodes.Modeling the charge carrier transport in the networks reveals that this process is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical length of the GNRs. Furthermore, we demonstrate that nuclear tunneling is a general charge transport characteristic of the GNR networks by using two different GNRs. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism puts GNR-based electronics in a new perspective.