No abstract

Embedded eigenstates are nonradiative modes of an open structure with momentum compatible with radiation, yet characterized by unboundedly large Q-factors. Traditionally, these states originate from total destructive interference of radiation from two or more non-orthogonal modes in periodic structures. In this work, we demonstrate a novel class of embedded eigenstates based on Berreman modes in epsilon-near-zero layered materials and we propose realistic silicon carbide structures supporting high-Q (~10 3 ) resonances based on these principles. Remarkably, the proposed structures demonstrate strong absorption in a narrow spectral and angular range around the quasi-EE state, giving rise to quasi-coherent and highly directive thermal emission.

Epsilon-near-zero and epsilon near-pole materials enable reflective systems supporting a class of symmetry-protected and accidental embedded eigenstates (EE) characterized by a diverging phase-resonance. Here we show that pairs of topologically protected scattering singularities necessarily emerge from EEs when a non-Hermitian parameter is introduced, lifting the degeneracy between oppositely charged singularities. The underlying topological charges are characterized by an integer winding number and appear as phase vortices of the complex reflection coefficient. By creating and annihilating them, we show that these singularities obey charge conservation, and provide versatile control of amplitude, phase and polarization in reflection, with potential applications for polarization control and sensing.

In this paper, we propose a novel microwave microfluidic sensor with dual-sensing capability. The sensor is based on a dual-mode resonator that consists of a folded microstrip line loaded with interdigital lines and a stub at the plane of symmetry. Due to the specific configuration, the resonator exhibits two entirely independent resonant modes, which allows simultaneous sensing of two fluids using a resonance shift method. The sensor is designed in a multilayer configuration with the proposed resonator and two separated microfluidic channels—one intertwined with the interdigital lines and the other positioned below the stub. The circuit has been fabricated using low-temperature co-fired ceramics technology and its performance was verified through the measurement of its responses for different fluids in the microfluidic channels. The results confirm the dual-sensing capability with zero mutual influence as well as good overall performance. Besides an excellent potential for dual-sensing applications, the proposed sensor is a good candidate for application in mixing fluids and cell counting.

In this paper, we present a Fano metal-insulator-metal (MIM) structure based on an isosceles triangular cavity resonator for refractive index sensing applications. Due to the specific feeding scheme and asymmetry introduced in the triangular cavity, the resonator exhibits four sharp Fano-like resonances. The behavior of the structure is analyzed in detail and its sensing capabilities demonstrated through the responses for various refractive indices. The results show that the sensor has very good sensitivity and maximal figure of merit (FOM) value of 3.2 × 105. In comparison to other similar sensors, the proposed one has comparable sensitivity and significantly higher FOM, which clearly demonstrates its high sensing potential.

In this paper, we present two novel dual-band bandpass filters based on surface plasmon polariton-like (SPP-like) propagation induced by structural dispersion of substrate integrated waveguide (SIW). Both filters are realized as a three-layer SIW where each layer represents a sub-SIW structure with intrinsic effective permittivity that depends on its width and filling dielectric material. The layers are designed to have effective permittivities of opposite signs in certain frequency ranges, which enables SPP-like propagation to occur at their interfaces. Since three layers can provide two distinct SPP-like propagations, the filters exhibit dual-band behaviour. A detailed theoretical and numerical analysis and numerical optimization have been used to design the filters, which were afterwards fabricated using standard printed circuit board technology. The independent choice of geometrical parameters of sub-SIWs and/or the corresponding dielectric materials provide a great freedom to arbitrarily position the passbands in the spectrum, which is a significant advantage of the proposed filters. At the same time, they meet the requirements for low-cost low-profile configuration since they are realized as SIW structures, as well as for excellent in-band characteristics and selectivity which is confirmed by the measurement results.

Leveraging topological properties in the response of electromagnetic systems can greatly enhance their potential. Although the investigation of singularity‐based electromagnetics and non‐Hermitian electronics has considerably increased in recent years in the context of various scattering anomalies, their topological properties have not been fully assessed. In this work, it is theoretically and experimentally demonstrated that non‐Hermitian perturbations around bound states in the continuum can lead to singularities of the scattering matrix, which are topologically nontrivial and comply with charge conservation. The associated scattering matrix poles, zeros, and pole‐zero pairs delineate extreme scattering events, including lasing, coherent perfect absorption, and absorber‐lasers. The presented framework enables a recipe for generation, annihilation, and addition of these singularities in electric circuits, with potential for extreme scattering engineering across a broad range of the electromagnetic spectrum for sensing, wireless power and information transfer, polarization control, and thermal emission devices.

A novel UWB bandpass filter based on a grounded square patch resonator with slots is proposed. Owing to this specific geometry, three fundamental resonances of the resonator can be independently controlled and by their even distribution within the UWB range, an UWB passband can be formed. An UWB filter with in-band insertion loss <0.9 dB, group delay variation of 0.25 ns, and very small size of only 0.26λ g × 0.26λ g has been designed and fabricated, and measurement results are in good agreement with simulations.