We demonstrate efficient storage and retrieval of light pulses by electromagnetically induced transparency (EIT) in a Pr^{3+}:Y_{2}SiO_{5} crystal. Using a ring-type multipass configuration, we increase the optical depth (OD) of the medium up to a factor of 16 towards OD≈96. Combining the large optical depth with optimized conditions for EIT, we reach a light storage efficiency of (76.3±3.5)%. In addition, we perform extended systematic measurements of the storage efficiency versus optical depth, control Rabi frequency, and probe pulse duration. The data confirm the theoretically expected behavior of an EIT-driven solid-state memory.
Single neutral atoms trapped in optical tweezers and laser-coupled to Rydberg states provide a fast and flexible platform to generate configurable atomic arrays for quantum simulation. The platform is especially suited to study quantum spin systems in various geometries. However, for experiments requiring continuous trapping, inhomogeneous light shifts induced by the trapping potential and temperature broadening impose severe limitations. Here we show how Raman sideband cooling allows one to overcome those limitations, thus, preparing the stage for Rydberg dressing in tweezer arrays.
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