In this contribution, we elaborate a conductivity model for highly doped polycrystalline semiconductors. The prominent feature of the model is the description of grain-boundary scattering by field emission, i.e., quantum-mechanical tunneling of electrons through potential barriers at grain boundaries. For this purpose, we adapt a theory of Stratton [Theory of field emission from semiconductors, Phys. Rev. 125, 67 (1962)] to double Schottky barriers at grain boundaries. We provide strong evidence that field emission rather than the predominantly applied thermionic emission is the dominant transport path across grain boundaries in semiconductors with carrier concentrations exceeding approximately 10 19 cm −3. We obtain a comprehensive conductivity model for highly doped polycrystalline semiconductors by combining field emission with two intragrain scattering mechanisms, that are ionizedimpurity and electron-phonon scattering. The model is applied to a wide range of literature data in order to show its applicability and explanatory power. The literature data comprise, in particular, transparent conductive oxides with a special emphasis on aluminum-doped ZnO.

In this study, nanoimprint processing was used to realize various multiscale textures on glass substrates for application in thin-film photovoltaic devices. The multiscale textures are formed by a combination of large and small features, which proofed to be beneficial for light trapping in silicon thin-film solar cells. Two approaches for the fabrication of multiscale textures are presented in this study. In the first approach, the multiscale texture is realized at the lacquer/transparent conductive oxide (TCO) interface, and in the second approach, the multiscale texture is realized at the TCO/Si interface. Various types of multiscale textures were fabricated and tested in microcrystalline thin-film silicon solar cells in p-i-n configuration to identify the optimal texture for the light management. It was found that the best light-scattering multiscale texture was realized using an imprint-textured glass substrate, which contains large craters, in combination with HFetched TCO (ZnO:Al), which contains small features, on top of the imprint. With this structure (of the second approach), the shortcircuit current density of the solar cell devices was improved by 0.6 mA/cm −2 using multiscale textures realized by nanoimprint processing.

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This work elucidates the effect of the dopant aluminum on the growth of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films by means of a seed layer concept. Thin (<100 nm), highly doped seed layers and subsequently grown thick (∼800 nm), lowly doped bulk films were deposited using a ZnO:Al2O3 target with 2 wt. % and 1 wt. % Al2O3, respectively. We investigated the effect of bulk and seed layer deposition temperature as well as seed layer thickness on electrical, optical, and structural properties of ZnO:Al films. A reduction of deposition temperature by 100 °C was achieved without deteriorating conductivity, transparency, and etching morphology which renders these low-temperature films applicable as light-scattering front contact for thin-film silicon solar cells. Lowly doped bulk layers on highly doped seed layers showed smaller grains and lower surface roughness than their counterpart without seed layer. We attributed this observation to the beneficial role of the dopant aluminum that induces an enhanced surface diffusion length via a surfactant effect. The enhanced surface diffusion length promotes 2D-growth of the highly doped seed layer, which is then adopted by the subsequently grown and lowly doped bulk layer. Furthermore, we explained the seed layer induced increase of tensile stress on the basis of the grain boundary relaxation model. The model relates the grain size reduction to the tensile stress increase within the ZnO:Al films. Finally, temperature-dependent conductivity measurements, optical fits, and etching characteristics revealed that seed layers reduced grain boundary scattering. Thus, seed layers induced optimized grain boundary morphology with the result of a higher charge carrier mobility and more suitable etching characteristics. It is particularly compelling that we observed smaller grains to correlate with an enhanced charge carrier mobility. A seed layer thickness of 5 nm was sufficient to induce the beneficial effects.

Thin films containing SiO 2 nanoparticles and a TiO 2 binder were prepared by sol-gel processing; their transparency and haze were characterized. By applying additional SiO 2 films the surface of these scattering layers was smoothened. This procedure improved the microstructure of aluminum-doped zinc oxide and a-Si:H/lcSi:H subsequently deposited by vapor phase deposition. The electrical properties and performance of the resulting thin film solar cells were characterized. Based on these results the proof of concept is provided for the application of sol-gel derived scattering layers in thin film photovoltaics.

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High efficiency thin-film silicon solar cells require texturing of the front contacts for advanced light management. However, optically favorable textures may be challenging in terms of the electrical performance. Solar cells deposited on very rough front contacts show a reduced open-circuit voltage, V oc , as compared to flat TCOs. This contribution focuses on the impact of rough surfaces on the V oc in a-Si:H solar cells deposited on six different textured front TCOs. With various ilayer thicknesses from 100 to 400 nm the origin of the V oc loss is investigated. Based on our results we propose that the reduction of V oc in a-Si:H solar cells are mainly due to defective regions in the bulk material induced by very rough textures. It is also seen that enlarging the i-layer thickness can improve the V oc of solar cells when grown on very rough textures. By using variable illumination intensity measurements the existence of shunts could be evidenced.