Hippo effectors YAP and TAZ control cell fate and survival through various mechanisms, including transcriptional regulation of key genes. However, much of this research has been marked by conflicting results, as well as controversy over whether YAP and TAZ are redundant. A substantial portion of the discordance stems from their contradictory roles in stem cell self-renewal vs. differentiation and cancer cell survival vs. apoptosis. In this review, we present an overview of the multiple context-dependent functions of YAP and TAZ in regulating cell fate decisions in stem cells and organoids, as well as their mechanisms of controlling programmed cell death pathways in cancer.
Summary Although cell density is known to affect numerous biological processes including gene expression and cell fate specification, mechanistic understanding of what factors link cell density to global gene regulation is lacking. Here, we reveal that the expression of thousands of genes in mouse embryonic stem cells (mESCs) is affected by cell seeding density and that low cell density enhances the efficiency of differentiation. Mechanistically, β-catenin is localized primarily to adherens junctions during both self-renewal and differentiation at high density. However, when mESCs differentiate at low density, β-catenin translocates to the nucleus and associates with Tcf7l1, inducing co-occupied lineage markers. Meanwhile, Esrrb sustains the expression of pluripotency-associated genes while repressing lineage markers at high density, and its association with DNA decreases at low density. Our results provide new insights into the previously neglected but pervasive phenomenon of density-dependent gene regulation.
Carbon doped two-dimensional (2D) hexagonal boron nitride nanosheets (BNNSs) are obtained through a CO2—pulsed laser deposition (CO2—PLD) technique on silicon dioxide (SiO2) or molybdenum (Mo) substrates, showing - stable hysteresis characteristics over a wide range of temperatures, which makes them a promising candidate for materials based on non-volatile memory devices. This innovative material with electronic properties of n-type characterized in the form of back-to-back Schottky diodes appears to have special features that can enhance the device performance and data retention due to its functional properties, thermal-mechanical stability, and its relation with resistive switching phenomena. It can also be used to eliminate sneak current in resistive random-access memory devices in a crossbar array. In this sense constitutes a good alternative to design two series of resistance-switching Schottky barrier models in the gold/BNNS/gold and gold/BNNS/molybdenum structures; thus, symmetrical and non-symmetrical characteristics are shown at low and high bias voltages as indicated by the electrical current-voltage (I–V) curves. On the one hand, the charge recombination caused by thermionic emission does not significantly change the rectification characteristics of the diode, only its hysteresis properties change due to the increase in external voltage in the Schottky junctions. The addition of carbon to BNNSs creates boron vacancies that exhibit partially ionic character, which also helps to enhance its electrical properties at the metal-BNNS-metal interface.
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