Many procedures in modern clinical medicine rely on the use of electronic implants in treating conditions that range from acute coronary events to traumatic injury. However, standard permanent electronic hardware acts as a nidus for infection: bacteria form biofilms along percutaneous wires, or seed haematogenously, with the potential to migrate within the body and to provoke immune-mediated pathological tissue reactions. The associated surgical retrieval procedures, meanwhile, subject patients to the distress associated with re-operation and expose them to additional complications. Here, we report materials, device architectures, integration strategies, and in vivo demonstrations in rats of implantable, multifunctional silicon sensors for the brain, for which all of the constituent materials naturally resorb via hydrolysis and/or metabolic action, eliminating the need for extraction. Continuous monitoring of intracranial pressure and temperature illustrates functionality essential to the treatment of traumatic brain injury; the measurement performance of our resorbable devices compares favourably with that of non-resorbable clinical standards. In our experiments, insulated percutaneous wires connect to an externally mounted, miniaturized wireless potentiostat for data transmission. In a separate set-up, we connect a sensor to an implanted (but only partially resorbable) data-communication system, proving the principle that there is no need for any percutaneous wiring. The devices can be adapted to sense fluid flow, motion, pH or thermal characteristics, in formats that are compatible with the body's abdomen and extremities, as well as the deep brain, suggesting that the sensors might meet many needs in clinical medicine.
Here we demonstrate, via a modified transferprinting technique, that electrochemically fabricated porous silicon (PSi) distributed Bragg reflectors (DBRs) can serve as the basis of high-quality hybrid microcavities compatible with most forms of photoemitters. Vertical microcavities consisting of an emitter layer sandwiched between 11-and 15-period PSi DBRs were constructed. The emitter layer included a polymer doped with PbS quantum dots, as well as a heterogeneous GaAs thin film. In this structure, the PbS emission was significantly redistributed to a 2.1 nm full-width at halfmaximum around 1198 nm, while the PSi/GaAs hybrid microcavity emitted at 902 nm with a sub-nanometer full-width at half-maximum and quality-factor of 1058. Modification of PSi DBRs to include a PSi cavity coupling layer enabled tuning of the total cavity optical thickness. Infiltration of the PSi with Al 2 O 3 by atomic layer deposition globally red-shifted the emission peak of PbS quantum dots up to ∼18 nm (∼0.9 nm per cycle), while introducing a cavity coupling layer with a gradient optical thickness spatially modulated the cavity resonance of the PSi/GaAs hybrid such that there was an ∼30 nm spectral variation in the emission of separate GaAs modules printed ∼3 mm apart.
The emergence and growth of transformation optics over the past decade has revitalized interest in how a gradient refractive index (GRIN) can be used to control light propagation. Two-dimensional demonstrations with lithographically defined silicon (Si) have displayed the power of GRIN optics and also represent a promising opportunity for integrating compact optical elements within Si photonic integrated circuits. Here, we demonstrate the fabrication of three-dimensional Si-based GRIN micro-optics through the shape-defined formation of porous Si (PSi). Conventional microfabrication creates Si square microcolumns (SMCs) that can be electrochemically etched into PSi elements with nanoscale porosity along the shape-defined etching pathway, which imparts the geometry with structural birefringence. Free-space characterization of the transmitted intensity distribution through a homogeneously etched PSi SMC exhibits polarization splitting behavior resembling that of dielectric metasurfaces that require considerably more laborious fabrication. Coupled birefringence/GRIN effects are studied by way of PSi SMCs etched with a linear (increasing from edge to center) GRIN profile. The transmitted intensity distribution shows polarization-selective focusing behavior with one polarization focused to a diffraction-limited spot and the orthogonal polarization focused into two laterally displaced foci. Optical thickness-based analysis readily predicts the experimentally observed phenomena, which strongly match finite-element electromagnetic simulations.
Visibly transparent porous silicon dioxide (PSiO 2 ) and PSiO 2 /titanium dioxide (TiO 2 ) optical elements were fabricated by thermal oxidation, or a combination of thermal oxidation and atomic layer deposition infilling, of an electrochemically etched porous silicon (PSi) structure containing an electrochemically defined porosity profile. The thermally oxidized PSiO 2 structures are transparent at visible wavelengths and can be designed to have refractive indices ranging from 1.1 to 1.4. The refractive index can be increased above 2.0 through TiO 2 infilling of the pores. Applying this oxidation and TiO 2 infilling methodology enabled tuning of a distributed Bragg reflector (DBR) formed from PSi across the visible spectrum. At the maximum filling, the DBR exhibited a transmission of 2% at 620 nm. Simulations match well with measured spectra. In addition to forming DBR filters, phase-shaping gradient refractive index (GRIN) elements were formed. As a demonstration, a 4 mm diameter radial GRIN PSiO 2 element with a parabolic, lens-like phase profile with a calculated focal length of 1.48 m was formed. The calculated focal length was reduced to 0.80 m upon the addition of TiO 2 . All the structures showed broad transparency in the visible and were stable to the materials conversion process.
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