Introducing a zinc stannate, ZnSnO3 (ZTO), layer on
hydrothermally grown 3D-zinc oxide (ZnO) nanosheet thin films has
been proven to have a quenching effect on the photoluminescence emissions,
indicating very slow recombination of photoinduced electron–hole
pairs in photoelectrochemical water splitting (PEC) reactions. Motivated
by this, the ZnO/ZTO bilayer system has been used as the electron
transport layer for copper indium gallium sulfide (CIGS)-based photoelectrodes
in PEC applications. Furthermore, the poor photoresistivity of CIGS
has been improved via indium sulfide (In2S3)
deposition. Consequently, the photoelectrode obtained from the inverted
configuration, ZnO/ZTO/CIGS/In2S3, has generated
a photocurrent density of 6.4 mA cm–2 at 0.4 V (vs
Ag/AgCl), exceeding the performance of ZnO NS/CIGS/In2S3 photoelectrodes by three folds. The highest ABPE and IPCE
efficiencies have been calculated as 4.2% and 57%, respectively. More
importantly, two cost-effective nonvacuum techniques for large-scale
thin film fabrications such as chemical bath deposition (CBD) and
ultrasonic spray pyrolysis (USP) methods have been adopted to acquire
photoelectrodes with inverted configurations providing an advantageous
approach for low-cost photoelectrode design for sustainable energy
production.
The utilization of indium sulfide (In 2 S 3 ) photoelectrodes in an all-vanadium photoelectrochemical redox flow battery system has been investigated. The In 2 S 3 -based photoelectrodes have been prepared via the ultrasonic spray pyrolysis (USP) method. The thickness of the In 2 S 3 photoelectrodes has been altered via increasing the pass number of the USP nozzle from 25 to 75 passes. Each pass delivers 6 μL•cm −2 of the precursor solution. Within the scope of the photoelectrochemical oxidation on the In 2 S 3 , the vanadium couples of VO 2+ /V 3+ have been proven to be promising redox species. The maximum charge separation and quantum efficiencies of 46% and 20% have been calculated, respectively.
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