Abstract:We study the surface plasmon (SP) resonance energy of isolated spherical Ag nanoparticles dispersed on a silicon nitride substrate in the diameter range 3.5 -26 nm with monochromated electron energy-loss spectroscopy. A significant blueshift of the SP resonance energy of 0.5 eV is measured when the particle size decreases from 26 down to 3.5 nm. We interpret the observed blueshift using three models for a metallic sphere embedded in homogeneous background material: a classical Drude model with a homogeneous electron density profile in the metal, a semiclassical model corrected for an inhomogeneous electron density associated with quantum confinement, and a semiclassical nonlocal hydrodynamic description of the electron density. We find that the latter two models provide a qualitative explanation for the observed blueshift, but the theoretical predictions show smaller blueshifts than observed experimentally.
The ability to trap, manipulate and release single cells on a surface is important both for fundamental studies of cellular processes and for the development of novel lab-on-chip miniaturized tools for biological and medical applications. In this paper we demonstrate how magnetic domain walls generated in micro- and nano-structures fabricated on a chip surface can be used to handle single yeast cells labeled with magnetic beads. In detail, first we show that the proposed approach maintains the microorganism viable, as proven by monitoring the division of labeled yeast cells trapped by domain walls over 16 hours. Moreover, we demonstrate the controlled transport and release of individual yeast cells via displacement and annihilation of individual domain walls in micro- and nano-sized magnetic structures. These results pave the way to the implementation of magnetic devices based on domain walls technology in lab-on-chip systems devoted to accurate individual cell trapping and manipulation.
We demonstrate an electrochemical method-which we term oxidative decoupling transfer (ODT)for transferring chemical vapor deposited graphene from physically deposited copper catalyst layers. This copper oxidation-based transfer technique is generally applicable to copper surfaces, and is particularly suitable where the copper is adhered to a substrate such as oxidized silicon. Graphene devices produced via this technique demonstrate 30% higher mobility than similar devices produced by standard catalyst etching techniques. The transferred graphene films cover more than 94% of target substrates-up to 100 mm diameter films are demonstrated here-and exhibit a low Raman D:G peak ratio and a homogenous and continuous distribution of sheet conductance mapped by THz time-domain spectroscopy. By applying a fixed potential of-0.4V vs. an Ag/AgCl reference electrode-significantly below the threshold for hydrogen production by electrolysis of water-we avoid the formation of hydrogen bubbles at the graphene-copper interface, preventing delamination of thin sputtered catalyst layers from their supporting substrates. We demonstrate the reuse of the same growth substrate for five growth and transfer cycles and prove that this number is limited by the evaporation of Cu during growth of graphene. This technique therefore enables the repeated use of the highest crystallinity and purity substrates without undue increase in cost.
An impedance spectroscopic study of the interaction between thiol-modified Au electrodes and Saccharomyces cerevisiae of strain EBY44 revealed that the cells formed an integral part of the interface, modulating the capacitive properties until a complete monolayer was obtained, whereas the charge transfer resistance ( R ct) to the redox process of [Fe(CN)6] 3-/4- showed a linear relationship to the number of cells even beyond the monolayer coverage. R ct showed strong pH dependence upon increasing the pH of the utilized buffer to 7.2. Upon addition of S. cerevisiae cells at pH 7.2, the obtained value of R ct showed over 560% increase with respect to the value obtained on the same thiol-modified electrode without cells. It was demonstrated that real-time monitoring of S. cerevisiae proliferation, with frequency-normalized imaginary admittance (real capacitance) as the indicator, was possible using a miniaturized culture system, ECIS Cultureware, with integrated planar cysteamine-modified Au microelectrodes. A monolayer coverage was reached after 20-28 h of cultivation, observed as an approximately 15% decrease in the real capacitance of the system.
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